NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0113A

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SPT5006 __ __ __

SPT5008 __ __ __

│

│

│

│

│

│

│

│

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

UB = Up Bend

DB = Down Bend

/61 = TO-61

/3 = TO-3

M = TO-254

S1 = SMD1

SPT5006 and SPT5008

Series

10 AMPS

100 Volts

High Power - High Speed

NPN Transistors

Features:

• Radiation Tolerant

• Fast Switching, 100 ns Maximum t

d

• High Frequency, f

• BV

• High Linear Gain, Low Saturation Voltage

• Designed for Complementary Use With

SPT5007 and SPT5009

• TX, TXV, S-Level Screening Available.

Consult Factory.

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

80

Volts

Collector – Base Voltage

100

Volts

Emitter – Base Voltage

6

Volts

Collector Current

10

Amps

Base Current

3

Amps

Derate Above 50ºC

100

0.667

Watts

W/ºC

Operating & Storage Temperature

-65 to +200

ºC

Maximum Thermal Resistance

(Junction to Case)

1.5

ºC/W

TO-61 (/61)

TO-3(/3)

TO-254 (M)

SMD1 (S1)