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2SC2712 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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2SC2712 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() RECTRON SEMICONDUCTOR FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 2SC2712 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Emitter cut-off current (VEB= 5V, IC=0) DC current gain (VCE= 6V, IC= 2mA) Collector cut-off current (VCB= 60V, IE=0) Collector-emitter saturation voltage (IC= 100mA, IB= 10mA) Transition frequency (VCE= 10V, IC= 1mA) Output capacitance (VCB= 10V, IE= 0, f= 1MHZ) Noise figure (VCE= 6V, IC= 0.1mA, f= 1KHZ, Rg= 10KW) CHARACTERISTICS SYMBOL UNITS - - - - - - - - - - - 0.1 0.1 2.0 1.0 700 m A m A V V V V pF MHz dB Collector-base breakdown voltage (IC= 100mA, IE=0) Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 100mA, IC=0) CLASSIFICATION OF hFE RANK Range Marking O 70-140 120-240 LO LY V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE ICBO VCE(sat) fT Cob NF TYP MAX 60 50 5 - - 3.5 10 - 80 - 70 MIN BL Y 200-400 LG GR 350-700 LL 0.055(1.40) 0.047(1.20) - 0.1 - 0.25 BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 150 mW(Tamb=25OC) Collector current ICM : 150 mA Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
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Descripción similar - 2SC2712 |
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