S1B datasheet(2/4 Pages) SSC

2 / 4 page

S1A – S1M

01/01/2007 Rev. 2.00

www.SiliconStandard.com

MAXIMUM RATINGS (TA=25℃ unless otherwise specified)

Parameter

Symbols

S1A

S1B

S1D

S1G

S1J

S1K

S1M

Units

Maximum repetitive peak reverse voltage

VRRM

100

200

400

600

800

1000

Volts

Maximum RMS voltage

VRMS

140

280

420

560

700

Volts

Maximum DC blocking voltage

VDC

100

200

400

600

800

1000

Volts

Maximum average forward rectified current

(see fig.1)

IF(AV)

1.0

Amp

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated

load(JEDEC Method) TL =110℃

IFSM

40.0

30.0

Amps

Maximum instantaneous forward voltage at

1.0A

1.10

Volts

1.0

5.0

Maximum DC reverse current

@TA =25℃

at rated DC blocking voltage

@TA=125℃

Typical reverse recovery time at

IF =0.5A, IR=1.0A, Irr =0.25A

trr

1.0

Typical junction capacitance at 4.0V, 1MHz

Typical thermal resistance (NOTE 1)

RJL

℃/W

Operating junction temperature range

-55 to +150

℃

Storage temperature range

TSTG

-55 to +150

℃

NOTE:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with

0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

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