◎ SEMIHOW REV.A0,Oct 2007

TIP105/106/107

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

: TIP105

: TIP106

: TIP107

V

CBO

-60

-80

-100

V

V

V

Collector-Emitter Voltage : TIP105

: TIP106

: TIP107

V

CEO

-60

-80

-100

V

V

V

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Ta=25℃)

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

V

EBO

I

C

I

CP

I

B

P

C

P

C

T

J

T

STG

-5

-8

-15

-1

2

80

150

-65~150

V

A

A

A

W

W

℃

℃

CHARACTERISTICS

SYMBOL

Test Condition

Min

Max

Unit

Collector-Emitter Sustaining Voltage

: TIP105

: TIP106

: TIP107

V

I

-60

-80

-100

V

V

V

Collector Cut-off Current

: TIP105

: TIP106

: TIP107

I

CEO

V

V

V

-50

-50

-50

㎂

㎂

㎂

Collector Cut-off Current

: TIP105

: TIP106

: TIP107

I

CBO

V

V

V

-50

-50

-50

㎂

㎂

㎂

Emitter Cut-off Current

I

EBO

V

-2

㎃

DC Current Gain

h

FE

V

V

1000

200

20000

Collector-Emitter Saturation Voltage

V

I

I

-2

-2.5

V

V

Base-Emitter ON Voltage

V

V

-2.8

V

Output Capacitance

C

ob

V

300

㎊

TO-220

1. Base

2. Collector

3. Emitter

1 2

3

Monolithic Construction With Built In

Base-Emitter Shunt Resistors

- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)

- Collector-Emitter Sustaining Voltage

- Low Collector-Emitter Saturation Voltage

- Industrial Use

- Complementary to TIP100/101/102

PNP Epitaxial

Silicon Darlington

Transistor

Equivalent Circuit

* Pulse Test: PW

≤300us, Duty Cycle≤2%