2000 May 25

2

NXP Semiconductors

Product data sheet

Schottky barrier diode

BAT85

FEATURES

• Low forward voltage

• Guard ring protected

• Hermetically-sealed leaded glass

package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static

discharges, encapsulated in a hermetically-sealed subminiature SOD68

(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.

Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.

handbook, halfpage

MAM193

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

average forward current

PCB mounting, lead length = 4 mm;

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

−

5

A

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C