PBLS2002D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 27 August 2009

3 of 16

NXP Semiconductors

PBLS2002D

20 V PNP BISS loadswitch

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

TR2; NPN resistor-equipped transistor

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

10

V

input voltage

positive

-

+30

V

negative

-

−10

V

output current

-

100

mA

peak collector current

-

100

mA

total power dissipation

[1] -

200

mW

Per device

total power dissipation

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

0

160

120

40

80

006aaa414

0.4

0.2

0.6

0.8

(W)

0

(1)

(2)

(3)