PMD2001D datasheet(7/15 Pages) NXP

7 / 15 page

PMD2001D_2

Product data sheet

Rev. 02 — 28 August 2009

7 of 15

NXP Semiconductors

PMD2001D

MOSFET driver

VCE =5V

(1) Tamb = 150 °C

(2) Tamb = 125 °C

(3) Tamb = 100 °C

(4) Tamb =25 °C

(5) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

VCE =5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa772

400

200

600

800

hFE

IC (mA)

10−1

103

1102

(2)

(3)

(1)

(4)

(5)

VCE (V)

010

006aaa777

0.4

0.8

1.2

(A)

IB (mA) = 30

006aaa773

0.6

0.8

0.4

1.0

1.2

VBE

(V)

0.2

IC (mA)

10−1

103

102

110

(1)

(3)

(2)

006aaa776

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10−1

103

1102

(1)

(2)

(3)

PMD2001D Datasheet(PDF) 7 Page - NXP Semiconductors

PMD2001D Datasheet(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Descarga

Enlace URL