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RF2310PCBA Datasheet(PDF) 3 Page - RF Micro Devices

No. de pieza RF2310PCBA
Descripción Electrónicos  WIDEBAND GENERAL PURPOSE AMPLIFIER
PDF  10 Pages
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Fabricante Electrónico  RFMD [RF Micro Devices]
Página de inicio  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2310PCBA Datasheet(HTML) 3 Page - RF Micro Devices

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4-77
RF2310
Rev C5 010717
4
Application Schematic
Pin
Function
Description
Interface Schematic
1VCC
Power supply pin. An external bypass capacitor is recommended. The
total supply current is shared between this pin and pin 8 (through the
inductor).
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
To achieve the performance as specified, and to minimize instability, it
is recommended to have a local ground plane under the device, as
shown in the evaluation board layout.
3GND
Same as pin 2.
4RF IN
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC-coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
5GND
Same as pin 2.
6GND
Same as pin 2.
7GND
Same as pin 2.
8RF OUT
RF output and bias pin. Biasing is accomplished with an external choke
inductor to VCC that provides high impedance at the operating fre-
quency. Because DC is present on this pin, a DC-blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. The supply side of the bias network should also be well
bypassed.
VCC
RF IN
Bias
RF OUT
1
2
3
4
8
7
6
5
RF IN
V
CC =5V
22 pF
22 pF
100 nH
RF OUT
22 pF
100 nF



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