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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
*
*
*
*
* Represents "GND".
3
ISIG P
2
VCC2
1
VCC3
4
ISIG N
5
EN
6
7
8
9
10
11 BAND SEL
12 QSIG N
13 QSIG P
14 VREF
15 GC DEC
16
17
18
19
20
Σ
Mode
Control
&
Biasing
Power
Control
+45°
-45°
+45°
-45°
RF2483
LOW NOISE DUAL-BAND QUADRATURE
MODULATOR WITH AGC
• TDMA/GSM/EDGE Handsets
• GSM/EDGE Handsets
• W-CDMA Handsets
• TDMA-Based Wireless Applications
• Wireless Local Loop
• Basestations
The RF2483 is a dual-band direct I/Q to RF modulator
designed for handset applications where multiple modes
of operation are required. The device provides common
differential I/Q inputs and a common AGC amplifier. Inde-
pendent single-ended LO inputs and single-ended high
and low band RF outputs are provided. The device
achieves a very low out-of-band noise density of
-156dBm/Hz minimizing RF filtering. Operating from a
single 2.7V supply, the device is packaged in a
4 mmx4mm, 20-pin, plastic leadless chip carrier.
• Dual-Band Operation 700-2200MHz
• -156dBm/Hz noise@20MHz offset
•+19dBm OIP3
•+6dBm OP1dB
• 35dB Gain Control Range
• Single 2.7V to 3.3V Supply
RF2483
Low Noise Dual-Band Quadrature Modulator with
AGC
RF2483 PCBA
Fully Assembled Evaluation Board
5
Rev A2 010904
1.85
1.55 sq.
.60
.24 typ
.30
.18
3
.75
.50
.50
.23
.13
4 PLCS
.05
.01
12°
max
1.00
0.85
.80
.65
4.00
sq.
NOTES:
Shaded Pin is Lead 1.
1
Package Warpage: 0.05 mm max.
4
Die Thickness Allowable: 0.305 mm max.
5
Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
2
Dimension applies to plated terminal: to be measured between 0.02
mm and 0.25 mm from terminal end.
3
.65
.30
4 PLCS
Package Style: LCC, 20-Pin, 4x4