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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
PCS IN
VCC
PCS V
APC
GND
GSM V
APC
GSM IN
VCC
GSM OUT
GND
GND
GND
GND
VCC
PCS OUT
14
13
11
12
9
10
8
1
2
4
3
6
5
7
RF3108
TRIPLE-BAND GSM/DCS/PCS
POWER AMP MODULE
• 3V Dual-Band/Triple-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
•GPRS Compatible
The RF3108 is a high-power, high-efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is self-contained with 50
Ω input
and output terminals. The device is manufactured on an
advanced GaAs HBT process, and has been designed for
use as the final RF amplifier in GSM/DCS and PCS hand
held-digital cellular equipment and other applications in
the 880MHz to 915MHz and 1710MHz to 1910MHz
bands. On-board power control provides over 70 dB of
control range with an analog voltage input, and provides
power down with a logic "low" for standby operation. The
device is packaged in an ultra-small (9mmx10mm) LCC,
minimizing the required board space.
• Single 2.9V to 4.7V Supply Voltage
• +35.5dBm GSM Output Pwr at 3.5V
• +33.0dBm DCS/PCS Output Pwr at 3.5V
• 55% GSM and 50% DCS/PCS Efficiency
• Supports GSM, E-GSM and DCS/PCS
•9mmx10mm Package Size
RF3108
Triple-Band GSM/DCS/PCS Power Amp Module
RF3108 PCBA
Fully Assembled Evaluation Board
2
Rev A3 010702
1.40
1.40
1.40
1.40
1.40
1.30
1.40
0.30
10.0 + 0.10
9.0 + 0.10
0.60
typ.
0.90
typ.
Note orientation of Pin 1.
NOTE: Shaded area represents Pin 1.
1.55
+0.10
0.38
Ref.
1.00
typ.
Package Style: Module
Mexican ▼
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