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2SC5645 Datasheet(PDF) 1 Page - Sanyo Semicon Device

No. de pieza 2SC5645
Descripción Electrónicos  UHF to S Band Low-Noise Amplifier and OSC Applications
PDF  6 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5645 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SC5645
No.6588-1/6
UHF to S Band Low-Noise Amplifier
and OSC Applications
Features
Low noise : NF=1.5dB typ (f=2GHz).
High cutoff frequency
: fT=10GHz typ (VCE=1V).
: fT=12.5GHz typ (VCE=3V).
Low-voltage operating .
High gain :
S21e2=9.5dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
4V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Collector Dissipation
PC
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
10
µA
DC Current Gain
hFE
VCE=1V, IC=5mA
100
160
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
8
10
GHz
fT2VCE=3V, IC=15mA
12.5
GHz
Output Capacitance
Cob
VCE=1V, f=1MHz
0.55
0.7
pF
Reverse Transfer Capacitance
Cre
VCE=1V, f=1MHz
0.4
pF
Forward Transfer Gain
S21e2 1VCE=1V, IC=5mA, f=2GHz
8
9.5
dB
S21e2 2VCE=3V, IC=15mA, f=2GHz
10.5
dB
Noise Figure
NF
VCE=1V, IC=3mA, f=2GHz
1.5
2.3
dB
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SC5645
Package Dimensions
unit : mm
2106A
[2SC5645]
90100 TS IM TA-3001
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
2
3
0.2
1.6
0.3
0.5 0.5
1
0.75
0.6
0 to 0.1
0.1
Ordering number : ENN6588


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