PBLS2003S datasheet(7/16 Pages) NXP

7 / 16 page

PBLS2003S_2

Product data sheet

Rev. 02 — 24 August 2009

7 of 16

NXP Semiconductors

PBLS2003S

20 V PNP BISS loadswitch

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

VBEsat

base-emitter

saturation voltage

IC = −2 A; IB = −100 mA

[1] -

−0.95 −1.1

IC = −3 A; IB = −300 mA

[1] -

−1

−1.2

VBEon

base-emitter turn-on

voltage

VCE = −2 V; IC = −1A

[1] -

−0.8

−1.2

delay time

IC = −2 A; IBon = −100 mA;

IBoff = 100 mA

-7

rise time

ton

turn-on time

storage time

175

fall time

toff

turn-off time

205

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

MHz

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

µA

VCE =30V; IB =0A;

Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

400

µA

hFE

DC current gain

VCE =5V; IC = 5 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage VCE =5V; IC = 100 µA

1.1

0.8

VI(on)

on-state input voltage VCE = 0.3 V; IC = 10 mA

2.5

1.8

bias resistor 1 (input)

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

2.5

Table 7.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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