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CLP200M-TR Datasheet(PDF) 13 Page - STMicroelectronics

No. de pieza CLP200M-TR
Descripción Electrónicos  OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
PDF  21 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

CLP200M-TR Datasheet(HTML) 13 Page - STMicroelectronics

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Product(s)
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Product(s)
CLP200M
13/21
Symbol
Parameter
Test Conditions
Value
Unit
IPP
Line to GND peak surge
current
10/1000
µs (open circuit voltage
wave shape 10/1000
µs)
100
A
5/310
µs (open circuit voltage
wave shape 10/700
µs)
150
A
ITSM
Mains power induction
current
VRMS = 300V,R=600
Ω
t = 200ms
0.5
A
Mains power contact current
VRMS = 220V,R=10
Ω
(failure status threshold)
t = 200 ms
22
A
VRMS = 220V,R=600
Ω
t=15mn
0.30
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
-40to + 150
150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
ABSOLUTE MAXIMUM RATINGS (RSENSE =4
Ω, and Tamb =25°C)
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Max.
ILGL
Line to GND leakage
current
. VLG = 200 V
. Measured between TIP
(or RING) and GND
10
µA
Vref
Overvoltage internal refer-
ence
. ILG =1mA
. Measured between TIP
(or RING) and GND
215
V
VSWON
Line to GND voltage at SW1
or SW2 switching-on
. Measured at 50 Hz between
TIPL (or RINGL) and GND
290
V
ISWOFF
Line to GND current at SW1
or SW2 switching-off
. Refer to test circuit page 14
150
mA
ISWON
Line current at SW1 or SW2
switching-on
. Positive pulse
. Negative pulse
180
220
280
320
mA
C
Line to GND capacitance
. VLG =-1V+1VRMS
. F=1MHz
200
pF
ELECTRICAL CHARACTERISTICS (RSENSE =4
Ω, and Tamb = 25°C)



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