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STF9NK90Z Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STF9NK90Z
Descripción Electrónicos  N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™Power MOSFET
PDF  17 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF9NK90Z Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
4/17
Doc ID 9479 Rev 7
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
900
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V, VDS = 0
±
10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3.6 A
1.1
1.3
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
2115
190
40
-
pF
pF
pF
Coss eq
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 720 V
-
115
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 720 V, ID = 8 A
VGS =10 V
Figure 20
-
72
14
38
-
nC
nC
nC



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