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IPS616-25B Datasheet(PDF) 2 Page - IP SEMICONDUCTOR CO., LTD.

No. de pieza IPS616-25B
Descripción Electrónicos  silicon controlled rectifiers
PDF  4 Pages
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Fabricante Electrónico  IPS [IP SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPS616-25B Datasheet(HTML) 2 Page - IP SEMICONDUCTOR CO., LTD.

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ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
Symbol
Test Condition
IPS616-xxB
Unit
25
IGT
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
MAX
25
55
15
mA
VGT
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
MAX
1.3
2.0
1.1
V
VGD
DC gate voltage not to trigger
(Tj = 125℃, VDRM = rated value)
MAX
0.2
V
IL
IG = 1.2 IGT
MAX
60
mA
IH
Holding current
MAX
40
mA
dV/dt
VD = 67% VDRM gate open Tj = 125 ℃
MIN
500
V/us
2
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j
– c)
Junction to case
TO-220B
1.1
℃/W
Symbol
Test Conditions
Value
(MAX)
Unit
VTM
ITM = 24A, tp = 380uS
Tj = 25℃
1.6
V
IDRM / IRRM
VD = VDRM
Tj = 25℃
5
uA
VR = VRRM
Tj = 125℃
2
mA
STATIC CHARACTERISTICS
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
IPS616-xxB



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