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TLE7269G Datasheet(PDF) 21 Page - Infineon Technologies AG |
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TLE7269G Datasheet(HTML) 21 Page - Infineon Technologies AG |
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21 / 34 page ![]() Data Sheet 21 Rev. 1.2, 2007-11-13 TLE7269G Electrical Characteristics 6 Electrical Characteristics 6.1 Functional Device Characteristics Table 7 Electrical Characteristics 7.0 V < VS < 27 V; RL = 500 Ω; Vio = 5V; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Pos. Parameter Symbol Limit Values Unit Remarks Min. Typ. Max. Current Consumption 6.1.1 Current consumption at VS(both channels recessive) IS,rec 0.5 1.6 3.0 mA recessive state, without RL; VS = 13.5 V VTxD = Vio 6.1.2 Current consumption normal mode at Vio IVIO,norm – 10 50 µA Normal Operation mode. VIO=5 V 6.1.3 Current consumption at VS (both channels dominant) IS,dom – 3 5.0 mA dominant state, without RL; VS = 13.5 V; VTxD = 0 V 6.1.4 Current consumption in sleep mode at Vio IVIO,Sleep – 1 10 µA Sleep mode, VIO=5 V 6.1.5 Current consumption in sleep mode IS,Sleep –7 12 µA Sleep mode, VS = 18 V; VBUS= VWK = VS; 6.1.6 Current consumption in sleep mode IS,Sleep,typ – 5 10 µA Sleep mode, Tj < 85 °C; VS = 13.5 V; VWK= VS= VBUS; Under Voltage Detection 6.1.7 Blocking under voltage detection at V S ( V S on the falling edge) Vs,UV,BLK 3.5 – 5 V Communication blocked no reset (see Figure 11) 6.1.8 Power ON under voltage detection at V S Vs,UV,PON – – 3.5 V Device reset to Stand-By- Mode 1)(see Figure 11) 6.1.9 Under voltage detection at V IO VIO,UV 1.5 2.5 3 V Communication blocked no reset (see Figure 11) 6.1.10 Under voltage blanking time tblankUV –5 – µs 1) Receiver Outputs: RxD1, RxD2 6.1.11 HIGH level output current IRD,H –10 -4 -2 mA VRD = 0.8 × VIO 6.1.12 LOW level output current IRD,L 24 10 mA VRD = 0.2 × VIO |
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