2SA2059

2009-12-21

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2059

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

−20

V

Emitter-base voltage

−7

V

DC

−3.0

Collector current

Pulse

−5.0

A

Base current

−0.3

A

DC

1.0

Collector power

dissipation

t = 10 s

(Note)

2.5

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

2

)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)