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STM8L15 Datasheet(PDF) 108 Page - STMicroelectronics |
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STM8L15 Datasheet(HTML) 108 Page - STMicroelectronics |
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108 / 122 page ![]() Electrical parameters STM8L151xx, STM8L152xx 108/122 Doc ID 15962 Rev 5 Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: human body model and charge device model. This test conforms to the JESD22-A114A/A115A standard. Static latch-up ● LU: 3 complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. Table 56. EMI data (1) 1. Not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD = 3.6 V, TA = +25 °C, LQFP32 conforming to IEC61967-2 0.1 MHz to 30 MHz -3 dB μV 30 MHz to 130 MHz -9 130 MHz to 1 GHz 4 SAE EMI Level 2 - Table 57. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value (1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) 500 Table 58. Electrical sensitivities Symbol Parameter Class LU Static latch-up class II |
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