DMN100 datasheet(2/4 Pages) DIODES

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DMN100

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

@ Tj = 25°C

@ Tj = 125°C

IDSS

—

1.0

μA

VDS = 24V, VGS = 0V

Gate-Body Leakage

IGSS

—

± 100

VGS = ± 12V, VDS = 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(th)

1.0

—

3.0

VDS = 10V, ID = 1.0mA

Static Drain-Source On-Resistance

RDS (ON)

—

0.170

0.240

VGS = 4.5V, ID = 0.5A

VGS = 10V, ID = 1.0A

Forward Transconductance

gFS

1.3

2.4

⎯

VDS = 10V, ID = 0.5A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

—

150

—

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

VDS = 10V, VGS = 0V

f = 1.0MHz

Total Gate Charge

—

5.5

—

Gate-to-Source Charge

Qgs

—

0.8

—

Gate-to-Drain Charge

Qgd

—

1.3

—

VDS = 24V, ID = 1.0A,

VGS = 10V

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

—

Turn-Off Delay Time

tD(OFF)

—

Turn-On Rise Time

—

Turn-Off Fall Time

—

VDD = 10V, ID = 0.5A,

VGS = 5.0V, RGEN = 50Ω

SOURCE-DRAIN RATINGS (BODY DIODE)

Continuous Source Current

—

0.54

—

Pulse Source Current

ISM

—

4.0

—

Forward Voltage

VSD

—

1.2

IF = 1.0A, VGS = 0V

Reverse Recovery Time

trr

—

IF = 1.0A, di/dt = 50A/μs

Notes:

Pulse width

≤ 300μs, duty cycle ≤ 2%.

0.5

1.0

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

1.5

2.0

2.5

3.0

3.5

4.0

0.01

0.1

1.0

I , DRAIN CURRENT (A)

Fig. 2 On-Resistance vs. Drain Current

= 4.5V

= 10V

DMN100

Document number: DS30049 Rev. 7 - 2

2 of 4

www.diodes.com

November 2007

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