2DB1424R datasheet(1/4 Pages) DIODES

No. de pieza	2DB1424R

Descripción Electrónicos	PNP SURFACE MOUNT TRANSISTOR

PDF	4 Pages

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Fabricante Electrónico	DIODES [Diodes Incorporated]

Página de inicio	http://www.diodes.com

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2DB1424R

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Type Available (2DD2150)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT89-3L

•

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.072 grams (approximate)

SOT89-3L

3

1

2,4

COLLECTOR

EMITTER

BASE

4

3

2

1

C

B

E

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-20

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-6

V

Peak Pulse Current

ICM

-5

A

Continuous Collector Current

IC

-3

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3) @ TA = 25°C

PD

1

W

Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C

RθJA

125

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-20

⎯

V

IC = -50μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-20

⎯

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

⎯

V

IE = -50μA, IC = 0

Collector Cut-Off Current

ICBO

⎯

-0.1

μA

VCB = -20V, IE = 0

Emitter Cut-Off Current

IEBO

⎯

-0.1

μA

VEB = -5V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.18

-0.5

V

IC = -2A, IB = -0.1A

DC Current Gain

hFE

180

⎯

390

⎯

VCE = -2V, IC = -0.1A

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

28

⎯

pF

VCB = -10V, IE = 0,

f = 1MHz

Current Gain-Bandwidth Product

fT

⎯

220

⎯

MHz

VCE = -2V, IE = 0.1A,

f = 100MHz

Notes:

1.

No purposefully added lead.

2.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3.

Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4.

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

DS31329 Rev. 2 - 2

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