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DMN3112SSS Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMN3112SSS Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 4 page ![]() DMN3112SSS Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) A 0 0.4 0.8 1.2 1.6 2.0 2.4 I = 250µA D I = 1mA D 0 2 4 6 8 10 Fig. 8 Diode Forward Voltage vs. Current 0 0.2 0.4 0.6 0.8 1 1.2 V , SOURCE-DRAIN VOLTAGE (V) SD T = 25°C A Fig. 9 Typical Total Capacitance 10 100 1,000 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) DS C iss C oss C rss Fig. 10 Transient Thermal Response t , PULSE DURATION TIME (s) 1 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 T - T = P * R (t) Duty Cycle, D = t /t JA JA 12 θ R (t) = r(t) * R R = 168°C/W θθ θ JA JA JA P(pk) t 1 t2 D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 DMN3112SSS Document number: DS31582 Rev. 1 - 2 3 of 4 www.diodes.com October 2008 © Diodes Incorporated |
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