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2DA1797 Datasheet(PDF) 1 Page - Diodes Incorporated

No. de pieza 2DA1797
Descripción Electrónicos  PNP SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2DA1797 Datasheet(HTML) 1 Page - Diodes Incorporated

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2DA1797
Document number: DS31619 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DA1797
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DC4672)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3) @ TA = 25°C
PD
0.9
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
RθJA
139
°C/W
Power Dissipation (Note 4) @ TA = 25°C
PD
2
W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
RθJA
62.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO
-50
V
IC = -50μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5)
V(BR)CEO
-50
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
V
IE = -50μA, IC = 0
Collector Cut-Off Current
ICBO
-0.1
μA
VCB = -50V, IE = 0
Emitter Cut-Off Current
IEBO
-0.1
μA
VEB = -5V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
VCE(SAT)
-100
-350
mV
IC = -1A, IB = -50mA
DC Current Gain
hFE
82
270
VCE = -2V, IC = -500mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
27
pF
VCB = -10V, IE = 0,
f = 1MHz
Current Gain-Bandwidth Product
fT
160
MHz
VCE = -2V, IC = -100mA,
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
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