VN10LP datasheet(1/1 Pages) DIODES

No. de pieza	VN10LP

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – NOVEMBER 2005

FEATURES

*60 Volt V

DS

*R

DS(on)=5Ω

REFER TO ZVN3306A FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

60

V

Continuous Drain Current at Tamb = 25°C

ID

270

mA

Pulsed Drain Current

IDM

3A

Gate Source Voltage

VGS

± 20

V

Power Dissipation at Tamb = 25°C

Ptot

625

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Drain-Source

Breakdown Voltage

BV

DSS

60

V

ID=100µA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

0.8

2.5

V

ID=1mA, VDS= VGS

Gate Body Leakage

IGSS

100

nA

VGS=± 20V, VDS=0V

Zero Gate Voltage

Drain Current (1)

IDSS

10

µA

VDS=60 V, VGS=0V

On State Drain

Current(1)

ID(on)

750

mA

VDS=15 V, VGS=10V

Static Drain Source On

State Resistance (1)

RDS(on)

5.0

7.5

Ω

VGS=10V,ID=500mA

VGS=5V, ID=200mA

Forward

Transconductance

(1)(2)

gfs

100

mS

VDS=15V,ID=500mA

Input Capacitance (2)

Ciss

60

pF

Common Source

Output Capacitance (2)

Coss

25

pF

VDS=25 V, VGS=0V

f=1MHz

Reverse Transfer

Capacitance (2)

Crss

5pF

Turn-On Time (2)(3)

t(on)

10

ns

VDD ≈15V, ID=600mA

Turn-Off Time (2)(3)

t(off)

10

ns

E-Line

TO92 Compatible

VN10LP

3-90

D

G

S

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