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LB1999M Datasheet(PDF) 3 Page - Sanyo Semicon Device

No. de pieza LB1999M
Descripción Electrónicos  Three-Phase Brushless Motor Driver for VCR Capstan Motors
PDF  8 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LB1999M Datasheet(HTML) 3 Page - Sanyo Semicon Device

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Continued from preceding page.
Notes : 1. The torque ripple correction ratio is determined as follows from the Rf voltage waveform.
2. Parameters that are indicated as design target values in the conditions column are not tested.
Truth Table and Control Functions
No. 5975-3/8
LB1999M
Correction ratio =
2
× (V
p – Vb) 100
× (%)
Vp – Vb
For each Hall logic setting
Ground level
Source
→ Sink
Hall input
FR
U
V
W
1
Phase V
→ Phase W
H
H
L
H
Phase W
→ Phase V
L
2
Phase U
→ Phase W
H
L
L
H
Phase W
→ Phase U
L
3
Phase U
→ Phase V
H
L
H
H
Phase V
→ Phase U
L
4
Phase W
→ Phase V
L
L
H
H
Phase V
→ Phase W
L
5
Phase W
→ Phase U
L
H
H
H
Phase U
→ Phase W
L
6
Phase V
→ Phase U
L
H
L
H
Phase U
→ Phase V
L
Note: In the FR column, “H” refers to a voltage of 2.75 V or higher, and “L” refers
to 2.25 V or lower (when VCC = 5 V.)
Note: In the Hall input column, “H” refers to the state in the corresponding phase
where the + input is at a potential at least 0.01 V higher than the – input,
and “L” refers to the state where the – input is at a potential at least 0.01 V
higher than the + input.
Note: Since the drive technique adopted is a 180° technique, phases
other than the sink and source phase do not turn off.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[Saturation]
Saturation prevention circuit lower
The voltages between each OUT and
side voltage setting
VOsat (DET) Rf pair when IO = 10 mA, Rf = 0.5 Ω, and
0.175
0.25
0.325
V
VCTL = VLIM = 5 V
[Schmitt Amplifier]
Duty ratio
DUTY
Under the specified conditions (RF = 39 kΩ)
48.7
50
51.3
%
Upper side output saturation voltage
Vsatu (SH)
IO = –20 µA
4.8
V
Lower side output saturation voltage
Vsatd (SH)
IO = 100 µA
0.2
V
Hysteresis width
Vhys
32
46
60
mV
TSD operating temperature
T-TSD
Design target value*2
170
°C



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