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ZXTD4591E6 Datasheet(PDF) 3 Page - Diodes Incorporated

No. de pieza ZXTD4591E6
Descripción Electrónicos  DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTD4591E6 Datasheet(HTML) 3 Page - Diodes Incorporated

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ISSUE 1 - JULY 2000
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-80
V
IC=-100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-60
V
IC=-10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE=-100 A
Collector Cut-Off Current
ICBO
-100
nA
VCB=-60V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector Emitter Cut-Off Current
ICES
-100
nA
VCES=-60V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
Base-Emitter Saturation Voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Static Forward Current Transfer
Ratio
hFE
100
100
80
15
300
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
Transition Frequency
fT
150
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
3



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