BMS3003 datasheet(2/5 Pages) SANYO

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BMS3003

No. A1907-2/5

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--60

Zero-Gate Voltage Drain Current

IDSS

VDS=--60V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--39A

130

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--39A, VGS=--10V

5.0

6.5

mΩ

RDS(on)2

ID=--39A, VGS=--4V

6.5

9.0

mΩ

Input Capacitance

Ciss

VDS=--20V, f=1MHz

13200

Output Capacitance

Coss

1300

Reverse Transfer Capacitance

Crss

950

Turn-ON Delay Time

td(on)

See Fig.2

Rise Time

360

Turn-OFF Delay Time

td(off)

1200

Fall Time

680

Total Gate Charge

VDS=--36V, VGS=--10V, ID=--78A

285

Gate-to-Source Charge

Qgs

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=--78A, VGS=0V

--0.95

--1.5

Reverse Recovery Time

trr

See Fig.3

IS=--78A, VGS=0V, di/dt=--100A/μs

150

Reverse Recovery Charge

Qrr

470

Fig.1 Avalanche Resistance Test Circuit

Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

50Ω

--10V

≥50Ω

VDD

BMS3003

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --39A

RL=0.92Ω

VDD= --36V

VOUT

VIN

--10V

VIN

BMS3003

VDD

BMS3003

Driver MOSFET

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