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2SB1202-X-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 2SB1202-X-TN3-R
Descripción Electrónicos  HIGH CURRENT SWITCHING APPLICATION
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB1202-X-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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2SB1202
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R217-005.E
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
TO-126C
20
W
TO-251
28
W
Collector Power Dissipation
Tc=25
°C
TO-252
PD
28
W
DC
IC
-3
A
Collector Current
PULSE
ICP
-6
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-126C
6.25
TO-251
4.53
Junction to Case
TO-252
θJC
4.53
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
C-B Breakdown Voltage
BVCBO
IC=-10μA, IE=0
-60
V
C-E Breakdown Voltage
BVCEO
IC=-1mA, RBE=∞
-50
V
E-B Breakdown Voltage
BVEBO
IE=-10μA, IC=0
-6
V
Collector Cutoff Current
ICBO
VCB=-40V,IE=0
-1
μA
Emitter Cutoff Current
IEBO
VEB=-4V,IC=0
-1
μA
C-E Saturation Voltage
VCE(SAT)
IC=-2A, IB=-100mA
-0.35
-0.7
V
B-E Saturation Voltage
VBE(SAT)
IC=-2A, IB=-100mA
-0.94
-1.2
V
hFE1
VCE=-2V, Ic=-100mA
100
560
DC Current Gain
hFE2
VCE=-2V, Ic=-3A
35
Gain-Bandwidth Product
fT
VCE=-10V, IC=-50mA
150
MHz
Output Capacitance
Cob
VCB=-10V, f=1MHz
39
pF
Turn-on Time
tON
See test circuit
70
ns
Storage Time
tSTG
See test circuit
450
ns
Fall Time
tF
See test circuit
35
ns
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560



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