3LN01ML-AL3-R datasheet(1/3 Pages) UTC

No. de pieza	3LN01ML-AL3-R

Descripción Electrónicos	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

PDF	3 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

3LN01M

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.a

N CHANNEL SILICON

MOSFET GENERAL-PURPOSE

SWITCHING DEVICE

APPLICATIONS

DESCRIPTION

The 3LN01M uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device’s general purpose is for switching device

applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

Lead-free:

3LN01ML

Halogen-free: 3LN01MG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen-Free

Package

1

2

3

Packing

3LN01M-AL3-R

3LN01ML-AL3-R

3LN01MG-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

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3LN01ML-AL3-R Datasheet(PDF) 1 Page - Unisonic Technologies

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