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12NN10L-S08-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 12NN10L-S08-R
Descripción Electrónicos  DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
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12NN10L-S08-R Datasheet(HTML) 2 Page - Unisonic Technologies

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12NN10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-506.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous(Note 3)
ID
2.5
A
Drain Current
Pulsed(Note 2)
IDM
10
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper
pad.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient (Note 1)
θJA
62.5
°C/W
Note: 1. Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper
pad.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
100
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
10
µA
Forward
VDS=0V ,VGS=20V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VDS=0V ,VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Drain-Source On-State Resistance (Note 1)
RDS(ON)
VGS=10V, ID=2A
150
mΩ
Forward Transconductance
gFS
VDS=10V, ID=2A
2.8
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
420
672
pF
Output Capacitance
COSS
60
pF
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V,f=1.0MHz
40
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
10
16
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
VDS=80V, VGS=10V, ID=2A
4
nC
Turn-ON Delay Time (Note 1)
tD(ON)
6.5
ns
Turn-ON Rise Time
tR
7
ns
Turn-OFF Delay Time
tD(OFF)
14
ns
Turn-OFF Fall Time
tF
VDS=50V, ID=2A, RG=3.3Ω
VGS=10V
3.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS =1.5A, VGS=0V
1.3
V



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