2 - 4

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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

1.5

2.5

S

C

iss

1050

pF

C

oss

V

GS

= 0 V, V

120

pF

C

rss

30

pF

t

d(on)

17

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

32

ns

t

f

18

ns

Q

g(on)

39

nC

Q

gs

V

GS

= 10 V, V

9nC

Q

gd

22

nC

R

thJC

0.8

K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

4

A

I

SM

Repetitive; pulse width limited by T

JM

16

A

V

SD

I

V

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

I

0.52

mC

I

RM

1.8

A

IXFH 4N100Q

IXFT 4N100Q

TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025