IXFN64N60P datasheet(1/5 Pages) IXYS

No. de pieza	IXFN64N60P

Descripción Electrónicos	PolarHV HiPerFET Power MOSFET

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Fabricante Electrónico	IXYS [IXYS Corporation]

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DS99443E(01/06)

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 3 mA

600

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

1000

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

96

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

600

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

600

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

50

A

I

DM

T

C = 25°C, pulse width limited by TJM

150

A

I

AR

T

C = 25°C

64

A

E

AR

T

C = 25°C

80

mJ

E

AS

T

C = 25°C

3.5

J

dv/dt

I

S

≤I

DM, di/dt £ 100 A/µs, VDD ≤ VDSS,

20

V/ns

T

J ≤150°C, RG = 2 Ω

P

D

T

C = 25°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

M

d

Mounting torque

1.13/10 Nm/lb.in.

Terminal torque

1.13/10 Nm/lb.in.

Weight

30

g

V

DSS

= 600

V

I

D25

=50

A

R

DS(on)

≤≤≤≤≤

96 m

Ω

t

rr

≤≤≤≤≤ 200

ns

IXFN 64N60P

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM

process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

G = Gate

D = Drain

S = Source

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IXFN64N60P Datasheet(PDF) 1 Page - IXYS Corporation

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