IXFN50N80Q2 datasheet(1/4 Pages) IXYS

No. de pieza	IXFN50N80Q2

Descripción Electrónicos	HiPerFET Power MOSFETs Q-Class

PDF	4 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

50

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

200

A

I

A

T

C = 25°C50

A

E

AS

T

C = 25°C5

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

1135

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

V

ISOL

50/60 Hz, RMS

t = 1 minute

2500

V~

I

ISOL ≤ 1mA

t = 1 second

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in.

Terminal Connection Torque

1.3/11.5

Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

800

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

μA

T

J = 125°C

3 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

160 m

Ω

IXFN50N80Q2

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

( Gate Return ) Terminal.

DS99028C(01/10)

miniBLOC, SOT-227

E153432

G

D

S

G = Gate

D = Drain

S = Source

Features

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Isolation Voltage 2500 V~

High Current Handling Capability

Fast Intrinsic Rectifier

Avalanche Rated

Low R

DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Switch-Mode and Resonant-Mode

Power Supplies >500kHz Switching

DC-DC Converters

DC Choppers

Pulse Generation

Laser Drivers

HiPerFETTM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low Intrinsic RG

High dV/dt, Low t

rr

V

DSS

=

800V

I

D25

=

50A

R

DS(on)

≤≤≤≤≤

160m

Ω

t

rr

≤≤≤≤≤

300ns

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IXFN50N80Q2 Datasheet(PDF) 1 Page - IXYS Corporation

IXFN50N80Q2 Datasheet(HTML) 1 Page - IXYS Corporation

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