IXFP4N100PM datasheet(1/4 Pages) IXYS

No. de pieza	IXFP4N100PM

Descripción Electrónicos	Polar HiperFET Power MOSFET

PDF	4 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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1 / 4 page

DS100295(11/10)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

6.0 V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

μA

T

J = 125°C

750

μA

R

DS(on)

V

GS = 10V, ID = 2A, Note 1

3.3

Ω

PolarTM HiperFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFP4N100PM

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

1000

V

DGR

T

J

= 25°C to 150°C, R

GS = 1 MΩ

1000

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

2.5

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

8.0

A

I

A

T

C = 25°C

4.0

A

E

AS

T

C = 25°C

200

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ =150°C

10

V/ns

P

D

T

C = 25°C

57

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6 mm (0.062 in.) from Case for 10 s

300

°C

T

SOLD

Plastic Body for 10 s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

2.5

g

Features

Plastic Overmolded Tab for Electrical

Isolation

Avalanche Rated

Fast Intrinsic Diode

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

V

DSS

= 1000V

I

D25

= 2.5A

R

DS(on) ≤

≤≤≤≤ 3.3

Ω

G = Gate

D = Drain

S = Source

OVERMOLDED

G

D S

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IXFP4N100PM Datasheet(PDF) 1 Page - IXYS Corporation

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