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BDS13 Datasheet(PDF) 2 Page - Seme LAB

No. de pieza BDS13
Descripción Electrónicos  SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
PDF  2 Pages
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Fabricante Electrónico  SEME-LAB [Seme LAB]
Página de inicio  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BDS13 Datasheet(HTML) 2 Page - Seme LAB

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LAB
SEME
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
PRELIM. 7/00
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector - Emitter
sustaining voltage (IB = 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
BDS13
VCB = –60V
BDS14
VCB = –80V
BDS15
VCB = –100V
BDS13
VCE = –30V
BDS14
VCE = –40V
BDS15
VCE = –50V
VEB = –5V
BDS13
BDS14
IC = –100mA
BDS15
IC = –5A
IB = –0.5A
IC = –10A IB = –2.5A
IC = –10A IB = –2.5A
IC = –5A
VCE = –4V
IC = –0.5A VCE = –4V
IC = –5A
VCE = –4V
IC = –10A VCE = –4V
IC = –0.5A VCE = –4V
–500
–500
–500
–1
–1
–1
–1
–60
–80
–100
–1
–3
–2.5
–1.5
40
250
15
150
5
3
mA
mA
mA
V
V
V
V
MHz
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(sat)*
VBE*
hFE*
fT
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300
ms , duty cycle = 1.5%
THERMAL DATA
RTHj-case
Thermal resistance junction - case
Max. 1.4°C/W
RTHcase-sink
Thermal resistance case - heatsink **
Typ. 1.0°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 80°C/W
** Smooth flat surface using thermal grease.
Parameter
Test Conditions
Max.
Unit
ton
ts
tr
On Time
(td + tr)
Storage Time
Fall Time
IC = 4A
VCC = 30V
IB1 = 0.4A
IC = 4A
VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
ms
ms
ms
SWITCHING CHARACTERISTICS



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