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IPW65R080CFD Datasheet(PDF) 6 Page - Infineon Technologies AG

No. de pieza IPW65R080CFD
Descripción Electrónicos  650V CoolMOS CFD Power Transistor
PDF  12 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPW65R080CFD Datasheet(HTML) 6 Page - Infineon Technologies AG

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650V CoolMOS™ CFD Power Transistor
IPW65R080CFD
Electrical characteristics
Final Data Sheet
6
Rev. 2.0, 2011-02-02
Table 6
Gate charge characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Gate to source charge
Qgs
-25
-
nC
VDD=480 V,
ID=26.3 A,
VGS=0 to 10 V
Gate to drain charge
Qgd
-120
-
Gate charge total
Qg
-170
-
Gate plateau voltage
Vplateau
-6.4
-
V
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
VSD
-0.9
-
V
VGS=0 V, IF=26.3 A,
Tj=25 °C
Reverse recovery time
trr
-180
-
ns
VR=400 V, IF=26.3 A,
diF/dt=100 A/µs
Reverse recovery charge
Qrr
-1
-
µC
Peak reverse recovery current
Irrm
-10
-
A



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