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2N3904 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N3904 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente 2N3904 0.2A, 60V NPN General Purpose Transistor 31-Dec-2010 Rev.B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Power Dissipation PCM: 625mW (Ta=25°C) Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V CLASSIFICATION OF hFE(1) Product-Rank 2N3904-O 2N3904-Y 2N3904-G Range 100~200 200~300 300~400 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current -Continuous IC 0.2 A Cpllector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 60 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 - - V IC=1mA, IB=0 Emitter - Base Breakdown Voltage V(BR)EBO 6 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=60V, IE=0 Collector Cut-Off Current ICEO 0.1 µA VCE=40V, IB=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB =5V, IC=0 hFE(1) 100 - 400 VCE=1V, IC=10mA DC Current Gain hFE(2) 60 - - VCE=1V, IC=50mA Collector-Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=50mA, IB=5mA Base-Emitter Saturation Voltage VBE(sat) - - 0.95 V IC=50mA, IB=5mA Transition Frequency fT 300 - - MHz VCE=20V, IC=10mA, f=100MHz TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 1 1 1 1Emitter 2 2 2 2Base 3 3 3 3Collector 2 Base 1 Emitter Collector 3 |
Número de pieza similar - 2N3904_10 |
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Descripción similar - 2N3904_10 |
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