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BCP56 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP56 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente BCP56 1A , 100V NPN Silicon Medium Power Transistor 12-May-2011 Rev. D Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP53 (PNP) CLASSIFICATION OF hFE(2) Product-Rank BCP56-16 Range 100~250 PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1 A Collector Power Dissipation PD 1.5 W Storage Temperature TSTG -65~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 100 V IC=0.1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO 80 V IC= 1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE= 10μA, IC=0 Collector cut-off current ICBO 100 nA VCB= 30V, IE=0 hFE (1) 63 VCE= 2V, IC= 5mA hFE (2) 63 250 VCE= 2V, IC= 150mA DC current gain 1 hFE (3) 40 VCE= 2V, IC= 500mA Collector-emitter saturation voltage 1 VCE(sat) 0.5 V IC=500mA, IB= 50mA Base-emitter voltage 1 VBE(on) 1 V VCE= 2V, IC= 500mA Transition frequency f T 100 MHz VCE= 5V, IC= 10mA Note: 1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%. Top View 1 2 3 4 A M B D L K F G H J E C Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 SOT-223 |
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