C

Po we r Se miconduc tors

O

TO-247

G

D

S

(S)

(B)

600V 60A 0.045Ω

APT60N60BCS

APT60N60SCS

APT60N60BCSG* APT60N60SCSG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Avalanche Energy Rated

• Extreme dv/dt Rated

Super Junction MOSFET

MAXIMUM RATINGS

All Ratings: T

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

T

T

L

dv/dt

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Continuous Drain Current @ T

Gate-Source Voltage Continuous

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

APT60N60B_SCS(G)

600

60

38

230

±30

431

3.45

-55 to 150

260

50

11

3

1950

MIN

TYP

MAX

600

0.045

25

250

±100

2.1

3

3.9

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG."

Microsemi Website - http://www.microsemi.com