DYNAMIC CHARACTERISTICS

APT77N60B_SC6

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature

2 Repetitive avalanche causes additional power losses that can be calculated as

PAV = EAR*f . Pulse width tp limited by Tj max.

3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

4 See MIL-STD-750 Method 3471

5 Eon includes diode reverse recovery.

6 Maximum 125°C diode commutation speed = di/dt 600A/μs

Symbol Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

C

iss

Input Capacitance

V

V

f = 1 MHz

13600

pF

C

oss

Output Capacitance

4400

C

rss

Reverse Transfer Capacitance

290

Q

g

V

V

I

260

nC

Q

gs

Gate-Source Charge

38

Q

gd

Gate-Drain ("Miller") Charge

144

t

d(on)

Turn-on Delay Time

INDUCTIVE SWITCHING

V

V

I

R

18

ns

t

r

Rise Time

27

t

d(off)

Turn-off Delay Time

110

165

t

f

Fall Time

812

E

on

INDUCTIVE SWITCHING @ 25°C

V

I

1670

μJ

E

off

Turn-off Switching Energy

2880

E

on

INDUCTIVE SWITCHING @ 125°C

V

I

2300

E

off

Turn-off Switching Energy

3100

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I

S

Continuous Source Current (Body Diode)

77

Amps

I

SM

231

V

SD

1

1.2

Volts

dv

/

dt

dt

6

15

V/ns

t

rr

Reverse Recovery Time

(I

di

/

T

950

ns

Q

rr

Reverse Recovery Charge

(I

di

/

T

32

μC

I

RRM

Peak Recovery Current

(I

di

/

T

60

Amps

Symbol

Characteristic

MIN

TYP

MAX

UNIT

R

θJC

Junction to Case

0.26

°C/W

R

θJA

Junction to Ambient

40

0

0.05

0.10

0.15

0.20

0.25

0.30

0.1

1

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note: