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M8050 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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M8050 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente 25-Nov-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power dissipation MARKING Product Marking Code M8050 Y11 PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch CLASSIFICATION OF hFE(2) Product-Rank M8050-L M8050-H Range 80-200 200-300 MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC =100µA, IE =0 V(BR)CBO 40 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 V(BR)CEO* 25 - - V Emitter-Base Breakdown Voltage IE = -100µA, IC =0 V(BR)EBO 6 - - V Collector Cut-Off Current VCB = 35V, IE =0 ICBO - - 0.1 µA Emitter Cut-Off Current VCE = 20V, IC =0 ICEO - - 0.1 µA DC Current Gain VCE = 1V, IC = 5mA hFE1 45 - - VCE = 1V, IC = 100mA hFE2 80 - 300 VCE = 1V, IC = 800mA hFE3 40 - - Collector-Emitter Saturation Voltage IC = 800mA, IB = 80mA VCE(sat) - - 0.5 V Base-Emitter Saturation Voltage IC = 800mA, IB = 80mA VBE(sat) - - 1.2 V Transition frequency VCE = 6V, IC = 20mA, f=30MHz fT 150 - - MHz *Pulse test:pulse width ≦ 300 S, duty cycle ≦ 2%. SOT-23 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H J F K E 1 2 3 1 2 3 |
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