SMG2329P datasheet(2/2 Pages) SECOS

2 / 2 page

SMG2329P

-2.5 A, -30 V, RDS(ON) 0.112 

P-Channel Enhancement MOSFET

Elektronische Bauelemente

12-Nov-2010 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

PARAMETER

SYMBO MIN TYP MAX UNIT

TEST CONDITIONS

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

±100

VDS = 0V, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS = -24V, VGS= 0V

-50

VDS = -24V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

VDS = -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

112

mΩ

VGS= -10V, ID = -2.5A

172

VGS= -4.5V, ID = -2.0A

Forward Transconductance

gFS

VDS= -4.5V,,ID = -2.5A

Diode Forward Voltage

VSD

-1.2

IS= -0.75A, VGS=0V

Dynamic

Total Gate Charge

4.5

ID= -2.5A

VDS= -30V

VGS= -5V

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

2.4

Turn-On Delay Time

Td(on)

ID= -1A, VDD= -30V

VGEN= -10V

RL= 30Ω

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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