Features

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The three layer, two terminal, axial lead, hermetically sealed

diacs are designed specifically for triggering thyristors.

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These diacs are intended for use in thyrisitors phase control ,

circuits for lamp dimming, universal motor speed control ,and

heat control.

DB3/DC34

AND

DB4

SILICON

BIDIRECTIONAL

DIAC

Power dissipation

on Printed

Circuit(l=10mm)

150mW

T

Repetitive Peak

on-state Current

DB3,DC34,DB4

2.0A

Breakover Voltage

Symmetry

DB3, DC34, DB4

-|-V

±3V

C=22nF(Note 3)

Voltage(Note 2)

V

o(min)

5V

Breakover

Current(Note 2)

100uA

C=22nF

Rise Time(Note 2)

1.5us

Leakage

Current(Note 2)

10uA

DO-35G

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

---

.150

---

3.8

B

---

.079

---

2.00

C

---

.020

---

.52

D

1.083

---

27.50

---

A

B

C

D

D

DIMENSIONS

omponents

20736 Marilla

Street Chatsworth



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MCC

Revision: B

2011/06/20

TM

Micro Commercial Components

1 of 3

Type number is marked.

Compliant. See ordering information)

2. Electrical characteristics applicable in both forward and

Note:

1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

reverse directions.

3. Connected in parallel with the devices.

tp=10us, f=100HZ

Breakover Voltage

DB3

DC34

DB4

Min Typ Max

28 32 36V

30 34 38V

35 40 45V

C=22nF(Note 3)

Output

Dynamic Breakover

Voltage

Δ V

(Note 2)

5V(Min.)

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Operating Temperature: -40

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Storage Temperature: -40

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Thermal Resistance Junction to Lead:167 C/W

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Thermal Resistance Junction to Ambient: 400 C/W

Maximum Ratings

o

o