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BAS316WS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BAS316WS Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 3 page ![]() BAS316WS 200mW, High-speed switching SMD Diode Small Signal Diode Electrical Characteristics I R = 100 uA IF= 1.0 mA IF= 10 mA IF= 50 mA IF= 150 mA VR= 75 V VR= 25 V Junction Capacitance VR= Reverse Recovery Time IF=IR= Tape & Reel specification Dimension(mm) Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. W1 14.4 Max. Overall tape thickness T 0.6 Max. Tape width Reel width W 8.30 Max. Sprocke hole position Punch hole position Sprocke hole pitch Embossment center P1 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 F P0 Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Item Carrier depth 2.40 Max. 1.50 +0.10 D Symbol K 0.855 E D2 178 ± 1 50 Min. 13.0 ± 0.5 1.75 ±0.10 A D1 VF 0.715 Max Units V V - Min - - Type Number Symbol 1.000 - 1.250 Forward Voltage Reverse Breakdown Voltage V(BR) 100 - Reverse Leakage Current IR - 1.00 uA 0.03 0, f=1.0MHz CJ - 1.5 pF ns 10mA, Irr=0.1 x IR, Trr - 4.0 Top Cover Tape Carieer Tape Any Additional Label (If Required) TSC label W1 D1 D2 Aersion : A10 Version : A10 |
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