STF8N65M5 datasheet(5/25 Pages) STMICROELECTRONICS

No. de pieza	STF8N65M5

Descripción Electrónicos	N-channel 650 V, 0.56 Ω, 7 A MDmesh??V Power MOSFET

PDF	25 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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5 / 25 page

STB/D/F/I/P/U8N65M5

Electrical characteristics

Doc ID 16531 Rev 3

5/25

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(off)

tr(V)

tc(off)

tf(i)

Turn-off delay time

Rise time

Cross time

Fall time

VDD = 400 V, ID = 4A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

(see Figure 23)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 7 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 20)

200

1.6

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 20)

263

1.9

µC

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