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BAS40 Datasheet(PDF) 1 Page - Diotec Semiconductor

No. de pieza BAS40
Descripción Electrónicos  Surface Mount Schottky Barrier Single/Double Diodes
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS40 Datasheet(HTML) 1 Page - Diotec Semiconductor

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BAS40, BAS40-04, BAS40-05, BAS40-06
BAS40, BAS40-04, BAS40-05, BAS40-06
Surface Mount Schottky Barrier Single/Double Diodes
Schottky-Barrier Einzel-/Doppel-Dioden für die Oberflächenmontage
Version 2005-06-21
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
310 mW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
40 V
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
per diode / pro Diode
BAS40-series
Power dissipation – Verlustleistung 1)Ptot
310 mW 2)
Max. average forward current (dc)
Dauergrenzstrom
IFAV
200 mA 2)
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM
300 mA 2)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
IFSM
0.6 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM
40 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage 3)
Durchlass-Spannung 3)
IF = 1 mA
IF = 10 mA
IF = 40 mA
VF
VF
VF
< 380 mV
< 500 mV
< 1.00 V
Leakage current
Sperrstrom
VR = 30 V
VR = 40 V
IR
IR
< 200 nA
< 10 µA
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
CT
5 pF
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
trr
< 5 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 400 K/W 2)
1
Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.9
Type
Code
3
2
1
0.4
2.9 ±0.1
1.1


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