2N4898 datasheet(1/3 Pages) ISC

No. de pieza	2N4898

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N4898 2N4899 2N4900

DESCRIPTION

・・With TO-66 package

・Low collector saturation voltage

・Excellent safe operating area

・2N4900 complement to type 2N4912

APPLICATIONS

・Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N4898

-40

2N4899

-60

VCBO

Collector-base voltage

2N4900

Open emitter

-80

V

2N4898

-40

2N4899

-60

VCEO

Collector-emitter voltage

2N4900

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-1.0

A

ICM

Collector current-peak

-4.0

A

IB

Base current

-1.0

A

PD

Total Power Dissipation

TC=25℃

25

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

7.0

℃/W

Fig.1 simplified outline (TO-66) and symbol

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2N4898 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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