2N6477 datasheet(1/3 Pages) ISC

No. de pieza	2N6477

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6477 2N6478

DESCRIPTION

・With TO-220 package

・Low collector saturation voltage

・High voltage ratings

・Excellent safe operating area

APPLICATIONS

・Series and shunt regulators

・High-fidelity amplifiers

・Power switching circuits

・Solenoid drivers

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6477

140

VCBO

Collector-base voltage

2N6478

Open emitter

160

V

2N6477

120

VCEO

Collector-emitter voltage

2N6478

Open base

140

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

2.5

A

ICM

Collector current-peak

4

A

IB

Base current

1

A

PT

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

2.5

℃/W

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2N6477 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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