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2N6542 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6542
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6542 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6542 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6542 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6542 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6542 2N6543
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6542
300
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6543
IC=0.1A ;IB=0
400
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A; IB=1.0A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.4
V
2N6542
VCE=650V; VBE(off)=1.5V
TC=100℃
0.5
3.0
ICEV
Collector cut-off current
2N6543
VCE=850V; VBE(off)=1.5V
TC=100℃
0.5
3.0
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1.5A ; VCE=2V
12
60
hFE-2
DC current gain
IC=3A ; VCE=2V
7
35
fT
Trainsistion frequency
IC=0.2A ; VCE=10V;f=1MHz
6
35
MHz
Switching times
td
Delay time
0.05
μs
tr
Rise time
0.7
μs
tstg
Storage time
4.0
μs
tf
Fall time
VCC=250V; IC=3.0A
IB1=-IB2=0.6A;tp=0.1ms
0.8
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.75
℃/W



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