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2SB337 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB337 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB337 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.6A; RBE= 68Ω -30 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B 0.29 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V 0.38 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 50 165 hFE Classifications A B 50-100 80-165 isc Website:www.iscsemi.cn |
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