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2SB676 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB676
Descripción Electrónicos  Silicon PNP Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB676 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB676
DESCRIPTION
・With TO-220C package
・High DC Current Gain
: hFE=2000 @VCE=-2V, IC=-1A (Min.)
・DARLINGTON
APPLICATIONS
・For switching applications
・Hammer drive, pulse motor drive applications
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current-DC
-4
A
PC
Collector power dissipation
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃


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